Strained field effect transistors

An NMOS transistor may be formed with a biaxially strained silicon upper layer having a thickness of greater than 500 Angstroms. The resulting NMOS transistor may have good performance and may exhibit reduced self-heating. A PMOS transistor may be formed with both a biaxially and uniaxially strained...

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Bibliographische Detailangaben

Hauptverfasser:	BRASK JUSTIN K, SHAHEED M. R, DATTA SUMAN, KAVALIEROS JACK T, RADOSAVLIEVIC MARKO, KEYS PATRICK H, METZ MATTHEW V, DOCZY MARK L, CHAU ROBERT S, DOYLE BRIAN S, JIN BEEN-YIH, KUHN MARKUS
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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