Etchant, method of etching, laminate formed thereby, and device

An etchant including a halogenated salt, such as Cryolite (Na3AlF6) or potassium tetrafluoro borate (KBF4), is provided. The salt may be present in the etchant in an amount sufficient to etch a substrate and may have a melt temperature of greater than about 200 degrees Celsius. A method of wet etchi...

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Hauptverfasser: TYSOE STEVEN A, LEBOEUF STEVEN F, BECKER CHARLES A, VENKATARAMANI VENKAT S, ARTHUR STEPHEN D, WOJNAROWSKI ROBERT J, EBONG ABASIFREKE U, DASGUPTA SAMHITA, SUBRAMANIAN KANAKASABAPATHI, TILAK VINAYAK, D'EVELYN MARK P, FORTIN JEFFREY B
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creator TYSOE STEVEN A
LEBOEUF STEVEN F
BECKER CHARLES A
VENKATARAMANI VENKAT S
ARTHUR STEPHEN D
WOJNAROWSKI ROBERT J
EBONG ABASIFREKE U
DASGUPTA SAMHITA
SUBRAMANIAN KANAKASABAPATHI
TILAK VINAYAK
D'EVELYN MARK P
FORTIN JEFFREY B
description An etchant including a halogenated salt, such as Cryolite (Na3AlF6) or potassium tetrafluoro borate (KBF4), is provided. The salt may be present in the etchant in an amount sufficient to etch a substrate and may have a melt temperature of greater than about 200 degrees Celsius. A method of wet etching may include contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the support layer may include aluminum oxide; or contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the etchant may include Cryolite (Na3AlF6), potassium tetrafluoro borate (KBF4), or both; and etching at least a portion of the support layer. The method may provide a laminate produced by growing a crystal onto an aluminum oxide support layer, and chemically removing at least a portion of the support layer by wet etch. An electronic device, optical device or combined device including the laminate is provided.
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The salt may be present in the etchant in an amount sufficient to etch a substrate and may have a melt temperature of greater than about 200 degrees Celsius. A method of wet etching may include contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the support layer may include aluminum oxide; or contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the etchant may include Cryolite (Na3AlF6), potassium tetrafluoro borate (KBF4), or both; and etching at least a portion of the support layer. The method may provide a laminate produced by growing a crystal onto an aluminum oxide support layer, and chemically removing at least a portion of the support layer by wet etch. 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subjects ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DECORATIVE ARTS
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
MEASURING
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
MOSAICS
NATURAL RESINS
PAINTS
PAPERHANGING
PERFORMING OPERATIONS
PHYSICS
POLISHES
PRODUCING DECORATIVE EFFECTS
SEMICONDUCTOR DEVICES
TARSIA WORK
TESTING
TRANSPORTING
title Etchant, method of etching, laminate formed thereby, and device
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