APPARATUS FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

An apparatus for manufacturing a semiconductor includes a polyhedral transfer chamber, a first process module for forming a gate dielectric layer by ALD, and a second process module for thermally treating the gate dielectric layer. The first process module is in communication with a first side of th...

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Hauptverfasser:	YOU YOUNG-SUB, KIM JAE-WOONG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	YOU YOUNG-SUB KIM JAE-WOONG
description	An apparatus for manufacturing a semiconductor includes a polyhedral transfer chamber, a first process module for forming a gate dielectric layer by ALD, and a second process module for thermally treating the gate dielectric layer. The first process module is in communication with a first side of the transfer chamber. The second process module in communication with a second side of the transfer chamber. The apparatus further includes at least one load-lock chamber in communication with a third side of the transfer chamber.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2006223308A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2006223308A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2006223308A13</originalsourceid><addsrcrecordid>eNqNizsKAjEUANNYiHqHB9ZCTEBsH8mLSZFkzWfbZZFYiS6s90cXPIDVFDOzZlfsOkxYagYTE3gM1aAqNblwAYRM3qkYdFXlazX1ThFg0OCp2KghmmXzS1wsQUZPW7a6j4-57X7csL2houyhTa-hzdN4a8_2HmoWnJ-EkJKf8Sj_qz5PHy_-</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>APPARATUS FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME</title><source>esp@cenet</source><creator>YOU YOUNG-SUB ; KIM JAE-WOONG</creator><creatorcontrib>YOU YOUNG-SUB ; KIM JAE-WOONG</creatorcontrib><description>An apparatus for manufacturing a semiconductor includes a polyhedral transfer chamber, a first process module for forming a gate dielectric layer by ALD, and a second process module for thermally treating the gate dielectric layer. The first process module is in communication with a first side of the transfer chamber. The second process module in communication with a second side of the transfer chamber. The apparatus further includes at least one load-lock chamber in communication with a third side of the transfer chamber.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20061005&DB=EPODOC&CC=US&NR=2006223308A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20061005&DB=EPODOC&CC=US&NR=2006223308A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YOU YOUNG-SUB</creatorcontrib><creatorcontrib>KIM JAE-WOONG</creatorcontrib><title>APPARATUS FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME</title><description>An apparatus for manufacturing a semiconductor includes a polyhedral transfer chamber, a first process module for forming a gate dielectric layer by ALD, and a second process module for thermally treating the gate dielectric layer. The first process module is in communication with a first side of the transfer chamber. The second process module in communication with a second side of the transfer chamber. The apparatus further includes at least one load-lock chamber in communication with a third side of the transfer chamber.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNizsKAjEUANNYiHqHB9ZCTEBsH8mLSZFkzWfbZZFYiS6s90cXPIDVFDOzZlfsOkxYagYTE3gM1aAqNblwAYRM3qkYdFXlazX1ThFg0OCp2KghmmXzS1wsQUZPW7a6j4-57X7csL2houyhTa-hzdN4a8_2HmoWnJ-EkJKf8Sj_qz5PHy_-</recordid><startdate>20061005</startdate><enddate>20061005</enddate><creator>YOU YOUNG-SUB</creator><creator>KIM JAE-WOONG</creator><scope>EVB</scope></search><sort><creationdate>20061005</creationdate><title>APPARATUS FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME</title><author>YOU YOUNG-SUB ; KIM JAE-WOONG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2006223308A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YOU YOUNG-SUB</creatorcontrib><creatorcontrib>KIM JAE-WOONG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YOU YOUNG-SUB</au><au>KIM JAE-WOONG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>APPARATUS FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME</title><date>2006-10-05</date><risdate>2006</risdate><abstract>An apparatus for manufacturing a semiconductor includes a polyhedral transfer chamber, a first process module for forming a gate dielectric layer by ALD, and a second process module for thermally treating the gate dielectric layer. The first process module is in communication with a first side of the transfer chamber. The second process module in communication with a second side of the transfer chamber. The apparatus further includes at least one load-lock chamber in communication with a third side of the transfer chamber.</abstract><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	APPARATUS FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T16%3A06%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YOU%20YOUNG-SUB&rft.date=2006-10-05&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2006223308A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true