Method of fabricating flash memory device

The present invention relates to a method of fabricating a flash memory device. The width of an active region (line) is reduced, but the width of a field region (space) is extended. An overlay margin between the floating gates and the active region depending upon increase in the level of integration...

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Bibliographische Detailangaben

1. Verfasser:	SHIN HYEON S
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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