Method of manufacturing a metal-insulator-metal capacitor using an etchback process

The present invention provides a method for manufacturing a metal-insulator-metal (MIM) capacitor, a method for manufacturing an integrated circuit having a metal-insulator-metal (MIM) capacitor, and an integrated circuit having a metal-insulator-metal (MIM) capacitor. The method for manufacturing the metal-insulator-metal (MIM) capacitor, among other steps and without limitation, includes providing a material layer ( 185 ) over a substrate ( 110 ), and forming a refractory metal layer ( 210 ) having a thickness (t1) over the substrate ( 110 ), at least a portion of the refractory metal layer ( 210 ) extending over the material layer ( 185 ). The method further includes reducing the thickness (t2) of the portion of the refractory metal layer ( 210 ) extending over the material layer ( 185 ), thereby forming a thinned refractory metal layer ( 310 ), and reacting the thinned refractory metal layer ( 310 ) with at least a portion of the material layer ( 185 ) to form an electrode ( 440 ) for use in a capacitor.