Method of increasing efficiency of thermotunnel devices

Method of increasing efficiency of thermotunnel devices

The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted with an insulator layer, preferably...

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Hauptverfasser: SVANIDZE VASIKO, TAVKHELIDZE AVTO, LARSSON MAGNUS
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SVANIDZE VASIKO
TAVKHELIDZE AVTO
LARSSON MAGNUS
description The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted with an insulator layer, preferably aluminum or silicon nitride, disposed between the collector and emitter electrodes. The present invention additionally comprises a method for enhancing tunneling of higher energy electrons from an emitter electrode to a collector electrode, the method comprising the step of contacting the collector electrode with an insulator, preferably aluminum or silicon nitride, and placing the insulator between the collector electrode and the emitter electrode.
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In one embodiment, the collector electrode is contacted with an insulator layer, preferably aluminum or silicon nitride, disposed between the collector and emitter electrodes. 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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method of increasing efficiency of thermotunnel devices
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