Substrate-processing apparatus and method of producing a semiconductor device
A CVD device has a reaction furnace ( 39 ) for processing a wafer ( 1 ); a seal cap ( 20 ) for sealing the reaction furnace ( 39 ) hermetically; an isolation flange ( 42 ) opposite to the seal cap ( 20 ); a small chamber ( 43 ) formed by the seal cap ( 20 ), the isolation flange ( 42 ), and the wall...
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| creator | MAEDA KIYOHIKO HISAKADO SADAO MORITA SHINYA TANIYAMA TOMOSHI TAKASHIMA YOSHIKAZU OZAKI TAKASHI UNAMI HIROSHI |
| description | A CVD device has a reaction furnace ( 39 ) for processing a wafer ( 1 ); a seal cap ( 20 ) for sealing the reaction furnace ( 39 ) hermetically; an isolation flange ( 42 ) opposite to the seal cap ( 20 ); a small chamber ( 43 ) formed by the seal cap ( 20 ), the isolation flange ( 42 ), and the wall surface in the reaction furnace ( 39 ); a feed pipe ( 19 b) for supplying a first gas to the small chamber ( 43 ); an outflow passage ( 42 a) provided in the small chamber ( 43 ) for allowing the first gas to flow into the reaction furnace ( 39 ); and a feed pipe ( 19 a) provided downstream from the outflow passage ( 42 a) for supplying a second gas into the reaction furnace ( 39 ). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased. |
| format | Patent |
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Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPANLk0qLilKLEnVLSjKT04tLs7MS1dILChIBIqVFisk5qUo5KaWZOSnKOSnKQCVpJQmg1UoFKfmZibn5wH5JflFCimpZZnJqTwMrGmJOcWpvFCam0HZzTXE2UM3tSA_PrW4IDE5NS-1JD402MjAwMzQ1MDSwMTR0Jg4VQAQdDe6</recordid><startdate>20060713</startdate><enddate>20060713</enddate><creator>MAEDA KIYOHIKO</creator><creator>HISAKADO SADAO</creator><creator>MORITA SHINYA</creator><creator>TANIYAMA TOMOSHI</creator><creator>TAKASHIMA YOSHIKAZU</creator><creator>OZAKI TAKASHI</creator><creator>UNAMI HIROSHI</creator><scope>EVB</scope></search><sort><creationdate>20060713</creationdate><title>Substrate-processing apparatus and method of producing a semiconductor device</title><author>MAEDA KIYOHIKO ; HISAKADO SADAO ; MORITA SHINYA ; TANIYAMA TOMOSHI ; TAKASHIMA YOSHIKAZU ; OZAKI TAKASHI ; UNAMI HIROSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2006150904A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>MAEDA KIYOHIKO</creatorcontrib><creatorcontrib>HISAKADO SADAO</creatorcontrib><creatorcontrib>MORITA SHINYA</creatorcontrib><creatorcontrib>TANIYAMA TOMOSHI</creatorcontrib><creatorcontrib>TAKASHIMA YOSHIKAZU</creatorcontrib><creatorcontrib>OZAKI TAKASHI</creatorcontrib><creatorcontrib>UNAMI HIROSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MAEDA KIYOHIKO</au><au>HISAKADO SADAO</au><au>MORITA SHINYA</au><au>TANIYAMA TOMOSHI</au><au>TAKASHIMA YOSHIKAZU</au><au>OZAKI TAKASHI</au><au>UNAMI HIROSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Substrate-processing apparatus and method of producing a semiconductor device</title><date>2006-07-13</date><risdate>2006</risdate><abstract>A CVD device has a reaction furnace ( 39 ) for processing a wafer ( 1 ); a seal cap ( 20 ) for sealing the reaction furnace ( 39 ) hermetically; an isolation flange ( 42 ) opposite to the seal cap ( 20 ); a small chamber ( 43 ) formed by the seal cap ( 20 ), the isolation flange ( 42 ), and the wall surface in the reaction furnace ( 39 ); a feed pipe ( 19 b) for supplying a first gas to the small chamber ( 43 ); an outflow passage ( 42 a) provided in the small chamber ( 43 ) for allowing the first gas to flow into the reaction furnace ( 39 ); and a feed pipe ( 19 a) provided downstream from the outflow passage ( 42 a) for supplying a second gas into the reaction furnace ( 39 ). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Substrate-processing apparatus and method of producing a semiconductor device |
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