PLT/PZT ferroelectric structure

An electrically stable PbLa0.5TiO3/PbZr0.52Ti0.48O3 (PLT/PZT) ferroelectric structure may fabricated using precursor solutions formed using a simple sol-gel process. The PLT/PZT ferroelectric structure may be extended to a PLT/PZT/PLT ferroelectric capacitor structure. In terms of device application...

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Bibliographische Detailangaben
Hauptverfasser: SAMPER VICTOR D, EZHILVALAVAN SANTHIAGU
Format: Patent
Sprache:eng
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Zusammenfassung:An electrically stable PbLa0.5TiO3/PbZr0.52Ti0.48O3 (PLT/PZT) ferroelectric structure may fabricated using precursor solutions formed using a simple sol-gel process. The PLT/PZT ferroelectric structure may be extended to a PLT/PZT/PLT ferroelectric capacitor structure. In terms of device application, better ferroelectric properties with reliable fatigue characteristics are desirable to render satisfactory performance and long device life. The PLT/PZT/PLT ferroelectric capacitor structure excels over previous hybrid structures by providing a larger remnant polarization, higher saturation polarization, lower coercive field and leakage current density and higher resistance to fatigue. The fabrication method involving the use of a PLT seeding layer acts to lower the fabrication temperature of the subsequent PZT layer and allows for a simpler sequence of processing steps that may be seen to substantially reduce manufacturing costs.