Storage and semiconductor device

A storage device includes a storage element having characteristics such that the resistance value thereof changes from a high state to a low state as a result of an electrical signal higher than or equal to a first threshold signal being applied and changes from a low state to a high state as a resu...

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Bibliographische Detailangaben
Hauptverfasser:	TSUSHIMA TOMOHITO, NAGAO HAJIME, OKAZAKI NOBUMICHI, SAGARA TSUTOMU, MORI HIRONOBU, HACHINO HIDENARI, OOTSUKA WATARU, NAKASHIMA CHIEKO
Format:	Patent
Sprache:	eng
Schlagworte:	CORRECTION OF TYPOGRAPHICAL ERRORS ELECTRICITY i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME LINING MACHINES PERFORMING OPERATIONS PRINTING SELECTIVE PRINTING MECHANISMS STAMPS TRANSPORTING TYPEWRITERS
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Beschreibung
Zusammenfassung:	A storage device includes a storage element having characteristics such that the resistance value thereof changes from a high state to a low state as a result of an electrical signal higher than or equal to a first threshold signal being applied and changes from a low state to a high state as a result of an electrical signal higher than or equal to a second threshold signal whose polarity differs from that of the first threshold signal being applied; and a circuit element that is connected in series to the storage element and that serves as a load, the storage element and the circuit element forming a memory cell, and the memory cells being arranged in a matrix, wherein the resistance value of the circuit element when the storage element is read differs from the resistance value when the storage element is written or erased.