Device having a laterally graded well structure and a method for its manufacture

Provided are a device and method for its manufacture. In one example, the device includes a semiconductor substrate that includes a well region formed using a first-type dopant. First and second doped regions are formed in the well region using a second-type dopant, and the first and second doped re...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JONG YUANG, WU KUO-MING, WU CHEN-BAU, LIU RUEY-HSING
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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