DUAL SILICIDE VIA CONTACT STRUCTURE AND PROCESS

A via contact is provided to a diffusion region at a top surface of a substrate which includes a single-crystal semiconductor region. The via contact includes a first layer which consists essentially of a silicide of a first metal in contact with the diffusion region at the top surface. A dielectric...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG YUN Y, OONK MATTHEW W, IWATAKE MICHAEL M, MELLO KEVIN E, WONG KEITH K, PIPER AMANDA L
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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