Layered semiconductor wafer with low warp and bow, and process for producing it

Semiconductor wafers with a diameter of at least 200 mm comprise a silicon carrier wafer, an electrically insulating layer and a semiconductor layer located thereon, the semiconductor wafer having been produced by means of a layer transfer process comprising at least one RTA step, wherein the semico...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BLIETZ MARKUS, HUBER ANDREAS, HOELZL ROBERT, WAHLICH REINHOLD
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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