Longitudinal misfet manufacturing method, Longitudinal misfet, semiconductor storage device manufacturing method, and semiconductor storage device

A semiconductor memory device includes a vertical MISFET having a source region, a channel forming region, a drain region, and a gate electrode formed on a sidewall of the channel forming region via a gate insulating film. In manufacturing the semiconductor memory device, the vertical MISFET in whic...

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Bibliographische Detailangaben

Hauptverfasser:	KISU HARUKO, MATSUOKA HIDEYUKI, NAKAZATO KAZUO, TABATA TSUYOSHI, KUJIRAI HIROSHI, KISU TERUAKI, MONIWA MASAHIRO, HAGA SATORU, KISU TERUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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