Metal capacitor stacked with a MOS capacitor to provide increased capacitance density

An on-chip capacitive device comprises a semiconductor substrate, a MOS capacitor formed on the semiconductor substrate, and a metal interconnect capacitor formed at least in part in a region above the MOS capacitor. The MOS capacitor and the metal interconnect capacitor are connected in parallel to...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	VUONG HONG-HA, HE CANZHONG, SCHULER JOHN A, SHARPE JOHN M
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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