Bird's beak-less or STI- less OTP EPROM

The present invention facilitates semiconductor fabrication by maintaining uniform thickness of a gate oxide layer ( 112 ) during the oxide growth process of non-volatile memory devices ( 100 ). The uniform thickness of a gate oxide layer ( 112 ) is obtained by defining the boundaries of the source...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	MITROS JOZEF C
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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