Semiconductor device and method for fabricating the same

The semiconductor device comprises a silicon wafer 10 , a multilayer interconnection 12 buried in inter-layer insulation film formed on the upper surface of the silicon wafer 10 , and a silicon nitride film 16 b which is formed on the back surface of the silicon wafer 10 and is an insulation film ha...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HAYAMI YUKA, OKOSHI KATSUAKI, SAIKI TAKASHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!