Process for removing organic materials during formation of a metal interconnect
A method for removing organic material from an opening in a low k dielectric layer and above a metal layer on a substrate is disclosed. An ozone water solution comprised of one or more additives such as hydroxylamine or an ammonium salt is applied as a spray or by immersion. A chelating agent may be...
Gespeichert in:
| Hauptverfasser: | , , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | SHIH HSINING HUANG JUN-LUNG TAO HUN-JAN CHAN BOR-WEN HSU PENG-FU SHEU LAWRANCE PERNG BAWING HUANG YIN |
| description | A method for removing organic material from an opening in a low k dielectric layer and above a metal layer on a substrate is disclosed. An ozone water solution comprised of one or more additives such as hydroxylamine or an ammonium salt is applied as a spray or by immersion. A chelating agent may be added to protect the metal layer from oxidation. A diketone may be added to the ozone water solution or applied in a gas or liquid phase in a subsequent step to remove any metal oxide that forms during the ozone treatment. A supercritical fluid mixture that includes CO2 and ozone can be used to remove organic residues that are not easily stripped by one of the aforementioned liquid solutions. The removal method prevents changes in the dielectric constant and refractive index of the low k dielectric layer and cleanly removes residues which improve device performance. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2005245082A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2005245082A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2005245082A13</originalsourceid><addsrcrecordid>eNqNyjEKAjEQheE0FqLeYcB6IUYXbEVW7BTUehniZAlsZpZJ9PxG8ABWD_73zc3lquIpZwiioJTkHXkA0QE5ekhYSCOOGZ4v_R5V1RaFQQIgJCo4QuSqvDCTL0szC9XT6rcLsz519-O5oUl6yhN6Yir94-asbd2utXt32Gz_Ux9qMjhB</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Process for removing organic materials during formation of a metal interconnect</title><source>esp@cenet</source><creator>SHIH HSINING ; HUANG JUN-LUNG ; TAO HUN-JAN ; CHAN BOR-WEN ; HSU PENG-FU ; SHEU LAWRANCE ; PERNG BAWING ; HUANG YIN</creator><creatorcontrib>SHIH HSINING ; HUANG JUN-LUNG ; TAO HUN-JAN ; CHAN BOR-WEN ; HSU PENG-FU ; SHEU LAWRANCE ; PERNG BAWING ; HUANG YIN</creatorcontrib><description>A method for removing organic material from an opening in a low k dielectric layer and above a metal layer on a substrate is disclosed. An ozone water solution comprised of one or more additives such as hydroxylamine or an ammonium salt is applied as a spray or by immersion. A chelating agent may be added to protect the metal layer from oxidation. A diketone may be added to the ozone water solution or applied in a gas or liquid phase in a subsequent step to remove any metal oxide that forms during the ozone treatment. A supercritical fluid mixture that includes CO2 and ozone can be used to remove organic residues that are not easily stripped by one of the aforementioned liquid solutions. The removal method prevents changes in the dielectric constant and refractive index of the low k dielectric layer and cleanly removes residues which improve device performance.</description><edition>7</edition><language>eng</language><subject>ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES ; APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CANDLES ; CHEMISTRY ; CINEMATOGRAPHY ; DETERGENT COMPOSITIONS ; DETERGENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; FATTY ACIDS THEREFROM ; HOLOGRAPHY ; MATERIALS THEREFOR ; METALLURGY ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; RECOVERY OF GLYCEROL ; RESIN SOAPS ; SEMICONDUCTOR DEVICES ; SOAP OR SOAP-MAKING ; USE OF SINGLE SUBSTANCES AS DETERGENTS</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20051103&DB=EPODOC&CC=US&NR=2005245082A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20051103&DB=EPODOC&CC=US&NR=2005245082A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHIH HSINING</creatorcontrib><creatorcontrib>HUANG JUN-LUNG</creatorcontrib><creatorcontrib>TAO HUN-JAN</creatorcontrib><creatorcontrib>CHAN BOR-WEN</creatorcontrib><creatorcontrib>HSU PENG-FU</creatorcontrib><creatorcontrib>SHEU LAWRANCE</creatorcontrib><creatorcontrib>PERNG BAWING</creatorcontrib><creatorcontrib>HUANG YIN</creatorcontrib><title>Process for removing organic materials during formation of a metal interconnect</title><description>A method for removing organic material from an opening in a low k dielectric layer and above a metal layer on a substrate is disclosed. An ozone water solution comprised of one or more additives such as hydroxylamine or an ammonium salt is applied as a spray or by immersion. A chelating agent may be added to protect the metal layer from oxidation. A diketone may be added to the ozone water solution or applied in a gas or liquid phase in a subsequent step to remove any metal oxide that forms during the ozone treatment. A supercritical fluid mixture that includes CO2 and ozone can be used to remove organic residues that are not easily stripped by one of the aforementioned liquid solutions. The removal method prevents changes in the dielectric constant and refractive index of the low k dielectric layer and cleanly removes residues which improve device performance.</description><subject>ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES</subject><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CANDLES</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>DETERGENT COMPOSITIONS</subject><subject>DETERGENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>FATTY ACIDS THEREFROM</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>RECOVERY OF GLYCEROL</subject><subject>RESIN SOAPS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SOAP OR SOAP-MAKING</subject><subject>USE OF SINGLE SUBSTANCES AS DETERGENTS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjEKAjEQheE0FqLeYcB6IUYXbEVW7BTUehniZAlsZpZJ9PxG8ABWD_73zc3lquIpZwiioJTkHXkA0QE5ekhYSCOOGZ4v_R5V1RaFQQIgJCo4QuSqvDCTL0szC9XT6rcLsz519-O5oUl6yhN6Yir94-asbd2utXt32Gz_Ux9qMjhB</recordid><startdate>20051103</startdate><enddate>20051103</enddate><creator>SHIH HSINING</creator><creator>HUANG JUN-LUNG</creator><creator>TAO HUN-JAN</creator><creator>CHAN BOR-WEN</creator><creator>HSU PENG-FU</creator><creator>SHEU LAWRANCE</creator><creator>PERNG BAWING</creator><creator>HUANG YIN</creator><scope>EVB</scope></search><sort><creationdate>20051103</creationdate><title>Process for removing organic materials during formation of a metal interconnect</title><author>SHIH HSINING ; HUANG JUN-LUNG ; TAO HUN-JAN ; CHAN BOR-WEN ; HSU PENG-FU ; SHEU LAWRANCE ; PERNG BAWING ; HUANG YIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2005245082A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2005</creationdate><topic>ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES</topic><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CANDLES</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>DETERGENT COMPOSITIONS</topic><topic>DETERGENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>FATTY ACIDS THEREFROM</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>METALLURGY</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>RECOVERY OF GLYCEROL</topic><topic>RESIN SOAPS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SOAP OR SOAP-MAKING</topic><topic>USE OF SINGLE SUBSTANCES AS DETERGENTS</topic><toplevel>online_resources</toplevel><creatorcontrib>SHIH HSINING</creatorcontrib><creatorcontrib>HUANG JUN-LUNG</creatorcontrib><creatorcontrib>TAO HUN-JAN</creatorcontrib><creatorcontrib>CHAN BOR-WEN</creatorcontrib><creatorcontrib>HSU PENG-FU</creatorcontrib><creatorcontrib>SHEU LAWRANCE</creatorcontrib><creatorcontrib>PERNG BAWING</creatorcontrib><creatorcontrib>HUANG YIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHIH HSINING</au><au>HUANG JUN-LUNG</au><au>TAO HUN-JAN</au><au>CHAN BOR-WEN</au><au>HSU PENG-FU</au><au>SHEU LAWRANCE</au><au>PERNG BAWING</au><au>HUANG YIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Process for removing organic materials during formation of a metal interconnect</title><date>2005-11-03</date><risdate>2005</risdate><abstract>A method for removing organic material from an opening in a low k dielectric layer and above a metal layer on a substrate is disclosed. An ozone water solution comprised of one or more additives such as hydroxylamine or an ammonium salt is applied as a spray or by immersion. A chelating agent may be added to protect the metal layer from oxidation. A diketone may be added to the ozone water solution or applied in a gas or liquid phase in a subsequent step to remove any metal oxide that forms during the ozone treatment. A supercritical fluid mixture that includes CO2 and ozone can be used to remove organic residues that are not easily stripped by one of the aforementioned liquid solutions. The removal method prevents changes in the dielectric constant and refractive index of the low k dielectric layer and cleanly removes residues which improve device performance.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2005245082A1 |
| source | esp@cenet |
| subjects | ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CANDLES CHEMISTRY CINEMATOGRAPHY DETERGENT COMPOSITIONS DETERGENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY FATTY ACIDS THEREFROM HOLOGRAPHY MATERIALS THEREFOR METALLURGY ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS RECOVERY OF GLYCEROL RESIN SOAPS SEMICONDUCTOR DEVICES SOAP OR SOAP-MAKING USE OF SINGLE SUBSTANCES AS DETERGENTS |
| title | Process for removing organic materials during formation of a metal interconnect |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T16%3A27%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SHIH%20HSINING&rft.date=2005-11-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2005245082A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |