Quantum cascade laser structure

A quantum cascade laser structure in accordance with the invention comprises a number of cascades ( 100 ), each of which comprises a number of alternately arranged quantum wells ( 110 a to 110 j) and barrier layers ( 105 to 105 j). The material of at least one quantum well ( 110 a to 110 j) as well...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: DRESSLER SEBASTIAN, GEORGIEV NIKOLAI, MASSELINK WILLIAM T, HELM MANFRED, SEMTSIV MYKHAYLO P, DEKORSY THOMAS, ZIEGLER MATHIAS
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A quantum cascade laser structure in accordance with the invention comprises a number of cascades ( 100 ), each of which comprises a number of alternately arranged quantum wells ( 110 a to 110 j) and barrier layers ( 105 to 105 j). The material of at least one quantum well ( 110 a to 110 j) as well as the material of at least one barrier layer ( 105 to 105 j) is under mechanical strain, with the respective strain being either a tensile strain or a compression strain. The quantum wells ( 110 a to 110 j) and barrier layers ( 105 to 105 j) are engineered in the quantum cascade laser structure in accordance with the invention so that existing strains are largely compensated within a cascade ( 100 ). In the quantum cascade laser structure in accordance with the invention, each material of the quantum wells ( 110 a to 110 j) has only one constituent material and the material of at least one barrier layer ( 105 d, 105 e, 105 f) has at least two constituent materials ( 111 a, 111 b, 112 a, 112 b, 113 a, 113 b).