Method for forming a self-aligned germanide and devices obtained thereof
A method for removing unreacted metal from a germanium layer, a germanide layer and or a dielectric material. The method includes removing the unreacted metal using a chemical composition that includes one or more hydrohalides, such as in an aqueous form. In certain embodiments, the chemical composi...
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| creator | OPSOMER KARL DEMEURISSE CAROLINE |
| description | A method for removing unreacted metal from a germanium layer, a germanide layer and or a dielectric material. The method includes removing the unreacted metal using a chemical composition that includes one or more hydrohalides, such as in an aqueous form. In certain embodiments, the chemical composition may also include H2SO4. Also, in certain embodiments, the chemical composition may be heated to increase the etch rate of the unreacted metal and/or improve the etch selectivity to the germanium, the germanide and/or the dielectric material. |
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The method includes removing the unreacted metal using a chemical composition that includes one or more hydrohalides, such as in an aqueous form. In certain embodiments, the chemical composition may also include H2SO4. Also, in certain embodiments, the chemical composition may be heated to increase the etch rate of the unreacted metal and/or improve the etch selectivity to the germanium, the germanide and/or the dielectric material.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SEMICONDUCTOR DEVICES</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050908&DB=EPODOC&CC=US&NR=2005196962A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050908&DB=EPODOC&CC=US&NR=2005196962A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OPSOMER KARL</creatorcontrib><creatorcontrib>DEMEURISSE CAROLINE</creatorcontrib><title>Method for forming a self-aligned germanide and devices obtained thereof</title><description>A method for removing unreacted metal from a germanium layer, a germanide layer and or a dielectric material. The method includes removing the unreacted metal using a chemical composition that includes one or more hydrohalides, such as in an aqueous form. In certain embodiments, the chemical composition may also include H2SO4. Also, in certain embodiments, the chemical composition may be heated to increase the etch rate of the unreacted metal and/or improve the etch selectivity to the germanium, the germanide and/or the dielectric material.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPDwTS3JyE9RSMsvAuHczLx0hUSF4tScNN3EnMz0vNQUhfTUotzEvMyUVIXEvBSFlNSyzOTUYoX8pJLETJB0SUZqUWp-Gg8Da1piTnEqL5TmZlB2cw1x9tBNLciPTy0uSExOzUstiQ8NNjIwMDW0NLM0M3I0NCZOFQA_MjTu</recordid><startdate>20050908</startdate><enddate>20050908</enddate><creator>OPSOMER KARL</creator><creator>DEMEURISSE CAROLINE</creator><scope>EVB</scope></search><sort><creationdate>20050908</creationdate><title>Method for forming a self-aligned germanide and devices obtained thereof</title><author>OPSOMER KARL ; DEMEURISSE CAROLINE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2005196962A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2005</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>OPSOMER KARL</creatorcontrib><creatorcontrib>DEMEURISSE CAROLINE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OPSOMER KARL</au><au>DEMEURISSE CAROLINE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for forming a self-aligned germanide and devices obtained thereof</title><date>2005-09-08</date><risdate>2005</risdate><abstract>A method for removing unreacted metal from a germanium layer, a germanide layer and or a dielectric material. The method includes removing the unreacted metal using a chemical composition that includes one or more hydrohalides, such as in an aqueous form. In certain embodiments, the chemical composition may also include H2SO4. Also, in certain embodiments, the chemical composition may be heated to increase the etch rate of the unreacted metal and/or improve the etch selectivity to the germanium, the germanide and/or the dielectric material.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
| title | Method for forming a self-aligned germanide and devices obtained thereof |
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