Semiconductor laser element formed on substrate having tilted crystal orientation

A semiconductor laser element having a structure in which at least one AlGaInP or GaInP layer is formed above a GaAs substrate. The crystal orientation of the principal plane of the GaAs substrate is tilted from ( 100 ) toward ( 111 ). When the total thickness of the at least one AlGaInP or GaInP la...

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1. Verfasser:	OHGOH TSUYOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY
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