DFB grating with dopant induced refractive index change

To make a grating substructure in semiconductor material for use in a DFB laser, a first layer of semiconductor material is doped at a first doping concentration. A second layer of the semiconductor material is formed over the first layer. The second layer is doped higher concentration than the firs...

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Bibliographische Detailangaben

Hauptverfasser:	MACQUISTAN DAVID A, GLEW RICK W, WHITE JOHN K, WOODS IAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY
Online-Zugang:	Volltext bestellen
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