Bidirectional high voltage switching device and energy recovery circuit having the same

Provided are a bi-directional high voltage switching device that includes an N-channel double diffused metal oxide semiconductor field effect transistor (DMOS FET) and a P-channel DMOS FET, each conducting current bi-directionally, and an energy recovery circuit that reduces the amount of energy con...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BYEON JAE-IL, SON IL-HUN, CHO YOON-JAY
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PULSE TECHNIQUE SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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