Freestanding multilayer IC wiring structure

Freestanding multilayer IC wiring structure

A dielectric wiring structure and method of manufacture therefor. The wiring structure includes air dielectric formed in a hemisphere. The wiring structure also includes, in embodiments, a method of simultaneously forming a MEMS structure with a transistor circuit using substantially the same steps....

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: NATZLE WESLEY C
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A dielectric wiring structure and method of manufacture therefor. The wiring structure includes air dielectric formed in a hemisphere. The wiring structure also includes, in embodiments, a method of simultaneously forming a MEMS structure with a transistor circuit using substantially the same steps. The MEMS structure of this embodiment includes freestanding electrodes which are not fixed to the substrate.