Read sensor with confined sense current

A magnetoresistive (MR) sensor having a decreased electrical profile due to a confining of the device sense current within a conductive nanoconstriction. The MR sensor includes a giant magnetoresistive (GMR) stack and a layer of high resistivity material within the GMR stack. The layer of high resis...

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Hauptverfasser: KIEF MARK T, NIKOLAEV KONSTANTIN R, TRAN KHUONG T, NOWAK JANUSZ J
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creator KIEF MARK T
NIKOLAEV KONSTANTIN R
TRAN KHUONG T
NOWAK JANUSZ J
description A magnetoresistive (MR) sensor having a decreased electrical profile due to a confining of the device sense current within a conductive nanoconstriction. The MR sensor includes a giant magnetoresistive (GMR) stack and a layer of high resistivity material within the GMR stack. The layer of high resistivity material includes a nanoconstriction precursor. When a punch current is applied at the nanoconstriction precursor, a conductive nanoconstriction is formed through the layer of high resistivity material at the nanoconstriction precursor.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2005122633A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2005122633A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2005122633A13</originalsourceid><addsrcrecordid>eNrjZFAPSk1MUShOzSvOL1IozyzJUEjOz0vLzEuFCKYqJJcWFaXmlfAwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvjQYCMDA1NDIyMzY2NHQ2PiVAEAOSwoyw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Read sensor with confined sense current</title><source>esp@cenet</source><creator>KIEF MARK T ; NIKOLAEV KONSTANTIN R ; TRAN KHUONG T ; NOWAK JANUSZ J</creator><creatorcontrib>KIEF MARK T ; NIKOLAEV KONSTANTIN R ; TRAN KHUONG T ; NOWAK JANUSZ J</creatorcontrib><description>A magnetoresistive (MR) sensor having a decreased electrical profile due to a confining of the device sense current within a conductive nanoconstriction. The MR sensor includes a giant magnetoresistive (GMR) stack and a layer of high resistivity material within the GMR stack. The layer of high resistivity material includes a nanoconstriction precursor. When a punch current is applied at the nanoconstriction precursor, a conductive nanoconstriction is formed through the layer of high resistivity material at the nanoconstriction precursor.</description><edition>7</edition><language>eng</language><subject>INFORMATION STORAGE ; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER ; PHYSICS</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20050609&amp;DB=EPODOC&amp;CC=US&amp;NR=2005122633A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20050609&amp;DB=EPODOC&amp;CC=US&amp;NR=2005122633A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIEF MARK T</creatorcontrib><creatorcontrib>NIKOLAEV KONSTANTIN R</creatorcontrib><creatorcontrib>TRAN KHUONG T</creatorcontrib><creatorcontrib>NOWAK JANUSZ J</creatorcontrib><title>Read sensor with confined sense current</title><description>A magnetoresistive (MR) sensor having a decreased electrical profile due to a confining of the device sense current within a conductive nanoconstriction. The MR sensor includes a giant magnetoresistive (GMR) stack and a layer of high resistivity material within the GMR stack. The layer of high resistivity material includes a nanoconstriction precursor. When a punch current is applied at the nanoconstriction precursor, a conductive nanoconstriction is formed through the layer of high resistivity material at the nanoconstriction precursor.</description><subject>INFORMATION STORAGE</subject><subject>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAPSk1MUShOzSvOL1IozyzJUEjOz0vLzEuFCKYqJJcWFaXmlfAwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvjQYCMDA1NDIyMzY2NHQ2PiVAEAOSwoyw</recordid><startdate>20050609</startdate><enddate>20050609</enddate><creator>KIEF MARK T</creator><creator>NIKOLAEV KONSTANTIN R</creator><creator>TRAN KHUONG T</creator><creator>NOWAK JANUSZ J</creator><scope>EVB</scope></search><sort><creationdate>20050609</creationdate><title>Read sensor with confined sense current</title><author>KIEF MARK T ; NIKOLAEV KONSTANTIN R ; TRAN KHUONG T ; NOWAK JANUSZ J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2005122633A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2005</creationdate><topic>INFORMATION STORAGE</topic><topic>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>KIEF MARK T</creatorcontrib><creatorcontrib>NIKOLAEV KONSTANTIN R</creatorcontrib><creatorcontrib>TRAN KHUONG T</creatorcontrib><creatorcontrib>NOWAK JANUSZ J</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIEF MARK T</au><au>NIKOLAEV KONSTANTIN R</au><au>TRAN KHUONG T</au><au>NOWAK JANUSZ J</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Read sensor with confined sense current</title><date>2005-06-09</date><risdate>2005</risdate><abstract>A magnetoresistive (MR) sensor having a decreased electrical profile due to a confining of the device sense current within a conductive nanoconstriction. The MR sensor includes a giant magnetoresistive (GMR) stack and a layer of high resistivity material within the GMR stack. The layer of high resistivity material includes a nanoconstriction precursor. When a punch current is applied at the nanoconstriction precursor, a conductive nanoconstriction is formed through the layer of high resistivity material at the nanoconstriction precursor.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
title Read sensor with confined sense current
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T10%3A52%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KIEF%20MARK%20T&rft.date=2005-06-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2005122633A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true