High permittivity silicate gate dielectric

A field effect semiconductor device comprising a high permittivity silicate gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A metal silicate gate dielectric layer 36 is formed...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WILK GLEN D, SUMMERFELT SCOTT R, WALLACE ROBERT M, ANTHONY JOHN M
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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