Method to lower work function of gate electrode through Ge implantation

A method for forming selective P type and N type gates is described. A gate oxide layer is grown overlying a semiconductor substrate. A polysilicon layer is deposited overlying the gate oxide layer. Germanium ions are implanted into a portion of the polysilicon layer not covered by a mask to form a...

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Bibliographische Detailangaben

Hauptverfasser:	CHEE JEFFREY, BHAT MOUSUMI, CHAN TZE HO S
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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