Fault detection and control methodologies for ion implantation processes, and system for performing same
The present invention is generally directed to fault detection and control methodologies for ion implant processes, and a system for performing same. In one illustrative embodiment, the method comprises performing a tuning process for an ion implant tool, the tuning process resulting in at least one...
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| creator | COSS ELFIDO JR COWAN PATRICK M TSE TOM MARKLE RICHARD J |
| description | The present invention is generally directed to fault detection and control methodologies for ion implant processes, and a system for performing same. In one illustrative embodiment, the method comprises performing a tuning process for an ion implant tool, the tuning process resulting in at least one tool parameter for the ion implant tool, selecting or creating a fault detection model for an ion implant process to be performed in the ion implant tool based upon the tool parameter resulting from the tuning process, and monitoring an ion implant process performed in the ion implant tool using the selected or created fault detection model. In another illustrative embodiment, the method comprises performing a tuning process for an ion implant tool, the tuning process resulting in at least one tool parameter for the ion implant tool, and determining if the tool parameter resulting from the tuning process is acceptable based on historical metrology data for implant regions formed in at least one substrate subjected to an ion implant process performed in the ion implant tool. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2005092939A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2005092939A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2005092939A13</originalsourceid><addsrcrecordid>eNqNy7EKwjAURuEuDqK-Q8BVobY4dBSxuKtzuaR_20CSG3Kvg2-vFh_A6SzfWRZTS0-vpofCquNoKPbGctTM3gToxD17Hh3EDJzNV7iQPEWlmafMFiKQ3XzKSxRhpgn5k-DiaIQC1sViIC_Y_Loqtu3lfr7ukbiDJLKI0O5xq8ryWDZVUzenQ_2fegNeO0Hx</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Fault detection and control methodologies for ion implantation processes, and system for performing same</title><source>esp@cenet</source><creator>COSS ELFIDO JR ; COWAN PATRICK M ; TSE TOM ; MARKLE RICHARD J</creator><creatorcontrib>COSS ELFIDO JR ; COWAN PATRICK M ; TSE TOM ; MARKLE RICHARD J</creatorcontrib><description>The present invention is generally directed to fault detection and control methodologies for ion implant processes, and a system for performing same. In one illustrative embodiment, the method comprises performing a tuning process for an ion implant tool, the tuning process resulting in at least one tool parameter for the ion implant tool, selecting or creating a fault detection model for an ion implant process to be performed in the ion implant tool based upon the tool parameter resulting from the tuning process, and monitoring an ion implant process performed in the ion implant tool using the selected or created fault detection model. In another illustrative embodiment, the method comprises performing a tuning process for an ion implant tool, the tuning process resulting in at least one tool parameter for the ion implant tool, and determining if the tool parameter resulting from the tuning process is acceptable based on historical metrology data for implant regions formed in at least one substrate subjected to an ion implant process performed in the ion implant tool.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050505&DB=EPODOC&CC=US&NR=2005092939A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050505&DB=EPODOC&CC=US&NR=2005092939A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>COSS ELFIDO JR</creatorcontrib><creatorcontrib>COWAN PATRICK M</creatorcontrib><creatorcontrib>TSE TOM</creatorcontrib><creatorcontrib>MARKLE RICHARD J</creatorcontrib><title>Fault detection and control methodologies for ion implantation processes, and system for performing same</title><description>The present invention is generally directed to fault detection and control methodologies for ion implant processes, and a system for performing same. In one illustrative embodiment, the method comprises performing a tuning process for an ion implant tool, the tuning process resulting in at least one tool parameter for the ion implant tool, selecting or creating a fault detection model for an ion implant process to be performed in the ion implant tool based upon the tool parameter resulting from the tuning process, and monitoring an ion implant process performed in the ion implant tool using the selected or created fault detection model. In another illustrative embodiment, the method comprises performing a tuning process for an ion implant tool, the tuning process resulting in at least one tool parameter for the ion implant tool, and determining if the tool parameter resulting from the tuning process is acceptable based on historical metrology data for implant regions formed in at least one substrate subjected to an ion implant process performed in the ion implant tool.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNy7EKwjAURuEuDqK-Q8BVobY4dBSxuKtzuaR_20CSG3Kvg2-vFh_A6SzfWRZTS0-vpofCquNoKPbGctTM3gToxD17Hh3EDJzNV7iQPEWlmafMFiKQ3XzKSxRhpgn5k-DiaIQC1sViIC_Y_Loqtu3lfr7ukbiDJLKI0O5xq8ryWDZVUzenQ_2fegNeO0Hx</recordid><startdate>20050505</startdate><enddate>20050505</enddate><creator>COSS ELFIDO JR</creator><creator>COWAN PATRICK M</creator><creator>TSE TOM</creator><creator>MARKLE RICHARD J</creator><scope>EVB</scope></search><sort><creationdate>20050505</creationdate><title>Fault detection and control methodologies for ion implantation processes, and system for performing same</title><author>COSS ELFIDO JR ; COWAN PATRICK M ; TSE TOM ; MARKLE RICHARD J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2005092939A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2005</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>COSS ELFIDO JR</creatorcontrib><creatorcontrib>COWAN PATRICK M</creatorcontrib><creatorcontrib>TSE TOM</creatorcontrib><creatorcontrib>MARKLE RICHARD J</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>COSS ELFIDO JR</au><au>COWAN PATRICK M</au><au>TSE TOM</au><au>MARKLE RICHARD J</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Fault detection and control methodologies for ion implantation processes, and system for performing same</title><date>2005-05-05</date><risdate>2005</risdate><abstract>The present invention is generally directed to fault detection and control methodologies for ion implant processes, and a system for performing same. In one illustrative embodiment, the method comprises performing a tuning process for an ion implant tool, the tuning process resulting in at least one tool parameter for the ion implant tool, selecting or creating a fault detection model for an ion implant process to be performed in the ion implant tool based upon the tool parameter resulting from the tuning process, and monitoring an ion implant process performed in the ion implant tool using the selected or created fault detection model. In another illustrative embodiment, the method comprises performing a tuning process for an ion implant tool, the tuning process resulting in at least one tool parameter for the ion implant tool, and determining if the tool parameter resulting from the tuning process is acceptable based on historical metrology data for implant regions formed in at least one substrate subjected to an ion implant process performed in the ion implant tool.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY |
| title | Fault detection and control methodologies for ion implantation processes, and system for performing same |
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