Self-aligned planar double-gate process by self-aligned oxidation

A double-gate transistor has front (upper) and back gates aligned laterally by a process of forming symmetric sidewalls in proximity to the front gate and then oxidizing the back gate electrode at a temperature of at least 1000 degrees for a time sufficient to relieve stress in the structure, the ox...

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Bibliographische Detailangaben

Hauptverfasser:	JONES ERIN CATHERINE, DOKUMACI OMER H, GUARINI KATHRYN W, DORIS BRUCE B, IEONG MEIKEI, HEGDE SURYANARAYAN G
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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