Mechanically-stable BJT with reduced base-collector capacitance

A bipolar junction transistor (BJT) requires the fabrication of a BJT structure and of a support post which is adjacent to, but physically and electrically isolated from, the BJT structure. The BJT structure includes a semi-insulating substrate, a subcollector, a collector, a base, and an emitter. M...

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Bibliographische Detailangaben

Hauptverfasser:	LI JAMES CHINGWEI, PIERSON RICHARD L, HIGGINS JOHN A, BRAR BERINDER P.S
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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