Semiconductor device method of generating semiconductor device pattern method of semiconductor device and pattern generator for semiconductor device

It is an object of the invention to effectively absorb a power noise and to implement the stable operation of a circuit. The invention provides a semiconductor device comprising a bypass capacitor including an MOS structure having a gate electrode formed to be extended from a power wiring region to...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HONMA JUNKO, BENNO HIROSHI, SHIMAZAKI KENJI, TSUJIKAWA HIROYUKI, ITOH MITSUMI, SAWADA MASATOSHI
Format: Patent
Sprache:eng
Schlagworte:
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