DRAM BURIED STRAP PROCESS WITH SILICON CARBIDE

DRAM BURIED STRAP PROCESS WITH SILICON CARBIDE

In the process of forming a trench capacitor, the conductive strap connecting the center electrode of the capacitor with a circuit element in the substrate, such as the pass transistor of a DRAM cell, is separated from the crystalline substrate material by a barrier layer of silicon carbide formed d...

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Bibliographische Detailangaben
Hauptverfasser: WANG YUN Y, DOBUZINSKY DAVID M, RAMACHANDRAN RAVIKUMAR, JAMMY RAJARAO, NINOMIYA YUKO LISA, FALTERMEIER JONATHAN E, SARDESAI VIRAJ Y, FLAITZ PHILIP L
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:In the process of forming a trench capacitor, the conductive strap connecting the center electrode of the capacitor with a circuit element in the substrate, such as the pass transistor of a DRAM cell, is separated from the crystalline substrate material by a barrier layer of silicon carbide formed during the process of etching the material within the trench, such as an oxide collar, using a reactive ion etch process with an etchant gas that contains carbon, such as C4F8.