Method of producing zinc oxide thin film, method of producing photovoltaic device and method of producing semiconductor device
The present invention provides a method of producing a zinc oxide thin film in which a current is passed between a conductive substrate immersed in an aqueous solution containing at least zinc ions, ammonium ions and zinc ammonia complex ions, and an electrode as an anode immersed in the aqueous sol...
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| creator | SANO MASAFUMI SONODA YUICHI |
| description | The present invention provides a method of producing a zinc oxide thin film in which a current is passed between a conductive substrate immersed in an aqueous solution containing at least zinc ions, ammonium ions and zinc ammonia complex ions, and an electrode as an anode immersed in the aqueous solution to form a zinc oxide thin film on the conductive substrate. This method stabilizes formation of the zinc oxide thin film and improves adhesion between the thin film and the substrate. |
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This method stabilizes formation of the zinc oxide thin film and improves adhesion between the thin film and the substrate.</description><edition>7</edition><language>eng</language><subject>APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; INORGANIC CHEMISTRY ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SEMICONDUCTOR DEVICES</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050127&DB=EPODOC&CC=US&NR=2005016862A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050127&DB=EPODOC&CC=US&NR=2005016862A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SANO MASAFUMI</creatorcontrib><creatorcontrib>SONODA YUICHI</creatorcontrib><title>Method of producing zinc oxide thin film, method of producing photovoltaic device and method of producing semiconductor device</title><description>The present invention provides a method of producing a zinc oxide thin film in which a current is passed between a conductive substrate immersed in an aqueous solution containing at least zinc ions, ammonium ions and zinc ammonia complex ions, and an electrode as an anode immersed in the aqueous solution to form a zinc oxide thin film on the conductive substrate. 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| subjects | APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES INORGANIC CHEMISTRY METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES |
| title | Method of producing zinc oxide thin film, method of producing photovoltaic device and method of producing semiconductor device |
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