METHOD FOR FORMING DAMASCENE STRUCTURE UTILIZING PLANARIZING MATERIAL COUPLED WITH DIFFUSION BARRIER MATERIAL

This invention relates to the manufacture of dual damascene interconnect structures in integrated circuit devices. Specifically, a method is disclosed for forming a single or dual damascene structure in a low-k dielectric thin film utilizing a planarizing material and a diffusion barrier material. I...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	COTE WILLIAM J, WILLE WILLIAM C, BIOLSI PETER E, UPHAM ALLAN W, EDELSTEIN DANIEL C, FRITCHE JOHN E
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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