Low temperature nitridation of silicon

A method of low-temperature nitridation of a silicon substrate includes placing a silicon wafer in a vacuum chamber on a heated chuck; maintaining the silicon wafer at a temperature of between about room temperature and 400° C.; introducing a nitrogen-containing gas into the vacuum chamber; dissocia...

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1. Verfasser:	ONO YOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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