Semiconductor device including an isolation trench having a dopant barrier layer formed on a sidewall thereof and a method of manufacture therefor

Semiconductor device including an isolation trench having a dopant barrier layer formed on a sidewall thereof and a method of manufacture therefor

The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the-same. In one advantageous embodiment the semiconductor device includes a doped layer located over a semiconductor substrate and an isolation trench located in the doped la...

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Hauptverfasser: THOMPSON BRIAN E, WALLACE STEVE, HSIEH CHUNG-MING, KRUTSICK THOMAS J, JONES BAILEY, DESKO JOHN C
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator THOMPSON BRIAN E
WALLACE STEVE
HSIEH CHUNG-MING
KRUTSICK THOMAS J
JONES BAILEY
DESKO JOHN C
description The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the-same. In one advantageous embodiment the semiconductor device includes a doped layer located over a semiconductor substrate and an isolation trench located in the doped layer. The isolation trench may further include a bottom surface and a sidewall. Additionally, the semiconductor device may include a dopant barrier layer located on the sidewall and a doped region located in the bottom surface.
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In one advantageous embodiment the semiconductor device includes a doped layer located over a semiconductor substrate and an isolation trench located in the doped layer. The isolation trench may further include a bottom surface and a sidewall. 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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device including an isolation trench having a dopant barrier layer formed on a sidewall thereof and a method of manufacture therefor
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