Semiconductor memory device

A memory cell array includes a memory cell region composed of memory cells and a sample cell region composed of word line sample cells and bit line sample cells. The word line sample cell and the bit line sample cell are formed so that by a voltage applied to word lines and bit lines, charge transfe...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	OZEKI TAKAO, MUKUNOKI TOSHIO, SUGIMOTO AKIRA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES STATIC STORES TESTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A memory cell array includes a memory cell region composed of memory cells and a sample cell region composed of word line sample cells and bit line sample cells. The word line sample cell and the bit line sample cell are formed so that by a voltage applied to word lines and bit lines, charge transfer from the floating gate electrode occurs more easily than the memory cell.