Simultaneous formation of device and backside contacts on wafers having a buried insulator layer

A semiconductor device manufacturing method is provided where a device structure is formed on top of a wafer that comprises a backside semiconductor substrate, a buried insulator layer and a top semiconductor layer. Then, an etch stop layer is formed upon the wafer that carries the device structure,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZISTL CHRISTIAN, BURBACH GERT, AMINPUR MASSUD
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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