Method for minimizing the vapor deposition of tungsten oxide during the selective side wall oxidation of tungsten-silicon gates

During a selective oxidation of gate structures that includes a polycrystalline silicon layer and a tungsten layer, which is known per se, a vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing, nona...

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Hauptverfasser:	SCHOER ERWIN, KEGEL WILHELM, ROTERS GEORG, FRIGGE STEFFEN, SACHSE JENS-UWE, HAYN REGINA, STORBECK OLAF, STADTMULLER MICHAEL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	SCHOER ERWIN KEGEL WILHELM ROTERS GEORG FRIGGE STEFFEN SACHSE JENS-UWE HAYN REGINA STORBECK OLAF STADTMULLER MICHAEL
description	During a selective oxidation of gate structures that includes a polycrystalline silicon layer and a tungsten layer, which is known per se, a vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing, nonaqueous inert gas before and, if appropriate, after a treatment step with a hydrogen/water mixture.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2004121569A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2004121569A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2004121569A13</originalsourceid><addsrcrecordid>eNqNjbEKwkAQRNNYiPoPC9aBJGrAUkSxsVLrcOT2koXLXchuotj4656ijZXVDDNvmHH0OKLUXoPxHTTkqKE7uQqkRhhUG0KNrWcS8g68AeldxYLB30gj6L770owWS6EhuFdzVda-IfU7jZkslSGrlCBPo5FRlnH20Uk03-_O20McbgvkVpXoUIrLKUuSZZqlq3y9SRf_UU99GEqX</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for minimizing the vapor deposition of tungsten oxide during the selective side wall oxidation of tungsten-silicon gates</title><source>esp@cenet</source><creator>SCHOER ERWIN ; KEGEL WILHELM ; ROTERS GEORG ; FRIGGE STEFFEN ; SACHSE JENS-UWE ; HAYN REGINA ; STORBECK OLAF ; STADTMULLER MICHAEL</creator><creatorcontrib>SCHOER ERWIN ; KEGEL WILHELM ; ROTERS GEORG ; FRIGGE STEFFEN ; SACHSE JENS-UWE ; HAYN REGINA ; STORBECK OLAF ; STADTMULLER MICHAEL</creatorcontrib><description>During a selective oxidation of gate structures that includes a polycrystalline silicon layer and a tungsten layer, which is known per se, a vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing, nonaqueous inert gas before and, if appropriate, after a treatment step with a hydrogen/water mixture.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040624&DB=EPODOC&CC=US&NR=2004121569A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040624&DB=EPODOC&CC=US&NR=2004121569A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SCHOER ERWIN</creatorcontrib><creatorcontrib>KEGEL WILHELM</creatorcontrib><creatorcontrib>ROTERS GEORG</creatorcontrib><creatorcontrib>FRIGGE STEFFEN</creatorcontrib><creatorcontrib>SACHSE JENS-UWE</creatorcontrib><creatorcontrib>HAYN REGINA</creatorcontrib><creatorcontrib>STORBECK OLAF</creatorcontrib><creatorcontrib>STADTMULLER MICHAEL</creatorcontrib><title>Method for minimizing the vapor deposition of tungsten oxide during the selective side wall oxidation of tungsten-silicon gates</title><description>During a selective oxidation of gate structures that includes a polycrystalline silicon layer and a tungsten layer, which is known per se, a vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing, nonaqueous inert gas before and, if appropriate, after a treatment step with a hydrogen/water mixture.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjbEKwkAQRNNYiPoPC9aBJGrAUkSxsVLrcOT2koXLXchuotj4656ijZXVDDNvmHH0OKLUXoPxHTTkqKE7uQqkRhhUG0KNrWcS8g68AeldxYLB30gj6L770owWS6EhuFdzVda-IfU7jZkslSGrlCBPo5FRlnH20Uk03-_O20McbgvkVpXoUIrLKUuSZZqlq3y9SRf_UU99GEqX</recordid><startdate>20040624</startdate><enddate>20040624</enddate><creator>SCHOER ERWIN</creator><creator>KEGEL WILHELM</creator><creator>ROTERS GEORG</creator><creator>FRIGGE STEFFEN</creator><creator>SACHSE JENS-UWE</creator><creator>HAYN REGINA</creator><creator>STORBECK OLAF</creator><creator>STADTMULLER MICHAEL</creator><scope>EVB</scope></search><sort><creationdate>20040624</creationdate><title>Method for minimizing the vapor deposition of tungsten oxide during the selective side wall oxidation of tungsten-silicon gates</title><author>SCHOER ERWIN ; KEGEL WILHELM ; ROTERS GEORG ; FRIGGE STEFFEN ; SACHSE JENS-UWE ; HAYN REGINA ; STORBECK OLAF ; STADTMULLER MICHAEL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2004121569A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SCHOER ERWIN</creatorcontrib><creatorcontrib>KEGEL WILHELM</creatorcontrib><creatorcontrib>ROTERS GEORG</creatorcontrib><creatorcontrib>FRIGGE STEFFEN</creatorcontrib><creatorcontrib>SACHSE JENS-UWE</creatorcontrib><creatorcontrib>HAYN REGINA</creatorcontrib><creatorcontrib>STORBECK OLAF</creatorcontrib><creatorcontrib>STADTMULLER MICHAEL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SCHOER ERWIN</au><au>KEGEL WILHELM</au><au>ROTERS GEORG</au><au>FRIGGE STEFFEN</au><au>SACHSE JENS-UWE</au><au>HAYN REGINA</au><au>STORBECK OLAF</au><au>STADTMULLER MICHAEL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for minimizing the vapor deposition of tungsten oxide during the selective side wall oxidation of tungsten-silicon gates</title><date>2004-06-24</date><risdate>2004</risdate><abstract>During a selective oxidation of gate structures that includes a polycrystalline silicon layer and a tungsten layer, which is known per se, a vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing, nonaqueous inert gas before and, if appropriate, after a treatment step with a hydrogen/water mixture.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Method for minimizing the vapor deposition of tungsten oxide during the selective side wall oxidation of tungsten-silicon gates
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T15%3A49%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SCHOER%20ERWIN&rft.date=2004-06-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2004121569A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true