Formation of aligned capped metal lines and interconnections in multilevel semiconductor structures

In integrated circuit technology; an electromigration and diffusion sensitive conductor of a metal such as copper and processing procedure therefore is provided, wherein, at a planarized chemical mechanical processed interfacing surface, the conductor metal is positioned in a region of a selectable...

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Bibliographische Detailangaben

Hauptverfasser:	CHIRAS STEFANIE RUTH, ROSENBERG ROBERT, LANE MICHAEL WAYNE, MC FEELY FENTON REED, SAMBUCETTI CARLOS JUAN, MALHOTRA SANDRA GUY, VEREECKEN PHILIPPE MARK
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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