Self aligned memory element and wordline

An organic polymer memory cell is provided having an organic polymer layer and an electrode layer formed over a first conductive (e.g., copper) layer (e.g., bitline). The memory cells are connected to a second conductive layer (e.g., forming a wordline), and more particularly the top of the electrod...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHEUNG PATRICK K, KHATHURIA ASHOK M
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator CHEUNG PATRICK K
KHATHURIA ASHOK M
description An organic polymer memory cell is provided having an organic polymer layer and an electrode layer formed over a first conductive (e.g., copper) layer (e.g., bitline). The memory cells are connected to a second conductive layer (e.g., forming a wordline), and more particularly the top of the electrode layer of the memory cells to the second conductive layer. Optionally, a conductivity facilitating layer is formed over the conductive layer. Dielectric material separates the memory cells. The memory cells are self-aligned with the bitlines formed in the first conductive layer and the wordlines formed in the second conductive layer.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2004108501A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2004108501A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2004108501A13</originalsourceid><addsrcrecordid>eNrjZNAITs1JU0jMyUzPS01RyE3NzS-qVEjNSc1NzStRSMxLUSjPL0rJycxL5WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgYGJoYGFqYGho6GxsSpAgBdUikF</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Self aligned memory element and wordline</title><source>esp@cenet</source><creator>CHEUNG PATRICK K ; KHATHURIA ASHOK M</creator><creatorcontrib>CHEUNG PATRICK K ; KHATHURIA ASHOK M</creatorcontrib><description>An organic polymer memory cell is provided having an organic polymer layer and an electrode layer formed over a first conductive (e.g., copper) layer (e.g., bitline). The memory cells are connected to a second conductive layer (e.g., forming a wordline), and more particularly the top of the electrode layer of the memory cells to the second conductive layer. Optionally, a conductivity facilitating layer is formed over the conductive layer. Dielectric material separates the memory cells. The memory cells are self-aligned with the bitlines formed in the first conductive layer and the wordlines formed in the second conductive layer.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20040610&amp;DB=EPODOC&amp;CC=US&amp;NR=2004108501A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20040610&amp;DB=EPODOC&amp;CC=US&amp;NR=2004108501A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHEUNG PATRICK K</creatorcontrib><creatorcontrib>KHATHURIA ASHOK M</creatorcontrib><title>Self aligned memory element and wordline</title><description>An organic polymer memory cell is provided having an organic polymer layer and an electrode layer formed over a first conductive (e.g., copper) layer (e.g., bitline). The memory cells are connected to a second conductive layer (e.g., forming a wordline), and more particularly the top of the electrode layer of the memory cells to the second conductive layer. Optionally, a conductivity facilitating layer is formed over the conductive layer. Dielectric material separates the memory cells. The memory cells are self-aligned with the bitlines formed in the first conductive layer and the wordlines formed in the second conductive layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAITs1JU0jMyUzPS01RyE3NzS-qVEjNSc1NzStRSMxLUSjPL0rJycxL5WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgYGJoYGFqYGho6GxsSpAgBdUikF</recordid><startdate>20040610</startdate><enddate>20040610</enddate><creator>CHEUNG PATRICK K</creator><creator>KHATHURIA ASHOK M</creator><scope>EVB</scope></search><sort><creationdate>20040610</creationdate><title>Self aligned memory element and wordline</title><author>CHEUNG PATRICK K ; KHATHURIA ASHOK M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2004108501A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHEUNG PATRICK K</creatorcontrib><creatorcontrib>KHATHURIA ASHOK M</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHEUNG PATRICK K</au><au>KHATHURIA ASHOK M</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Self aligned memory element and wordline</title><date>2004-06-10</date><risdate>2004</risdate><abstract>An organic polymer memory cell is provided having an organic polymer layer and an electrode layer formed over a first conductive (e.g., copper) layer (e.g., bitline). The memory cells are connected to a second conductive layer (e.g., forming a wordline), and more particularly the top of the electrode layer of the memory cells to the second conductive layer. Optionally, a conductivity facilitating layer is formed over the conductive layer. Dielectric material separates the memory cells. The memory cells are self-aligned with the bitlines formed in the first conductive layer and the wordlines formed in the second conductive layer.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2004108501A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Self aligned memory element and wordline
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T19%3A19%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHEUNG%20PATRICK%20K&rft.date=2004-06-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2004108501A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true