High density DRAM with reduced peripheral device area and method of manufacture

A dynamic random access memory (DRAM) structure having a distance less than 0.14 um between the contacts to silicon and the gate conductor is disclosed. In addition a method for forming the structure is disclosed, which includes forming the DRAM array contacts and the contacts to silicon simultaneou...

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Hauptverfasser:	BAKER STEVEN M, BERRY JON S, MALDEI MICHAEL, COUSINEAU BRIAN, LEE JINHWAN, GERSTMEIER GUENTER
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	BAKER STEVEN M BERRY JON S MALDEI MICHAEL COUSINEAU BRIAN LEE JINHWAN GERSTMEIER GUENTER
description	A dynamic random access memory (DRAM) structure having a distance less than 0.14 um between the contacts to silicon and the gate conductor is disclosed. In addition a method for forming the structure is disclosed, which includes forming the DRAM array contacts and the contacts to silicon simultaneously.
format	Patent
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	High density DRAM with reduced peripheral device area and method of manufacture
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