Layout techniques for the creation of dense radiation tolerant MOSFETs with small width-length ratios

A metal oxide semiconductor field effect transistor ("MOSFET") layout with small width-length ratio allows for greater flexibility in design and density in dimension than the conventional annular technique is provided. Accordingly, higher density MOSFET of this layout gives more devices on...

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Hauptverfasser:	FRAEMAN MARTIN E, STROHBEHN KIM, MARTIN MARK N
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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