Semiconductor device and method of manufacturing the same

A semiconductor device comprises a drain layer of first conductivity type, drift layers of first and second conductivity types on the drain layer, an insulating film between the drift layers and contacting the drift layers, a first base layer of second conductivity type on a surface of the drift lay...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	OHASHI HIROMICHI, OMURA ICHIRO, SAITO WATARU, YAMAGUCHI MASAKAZU, SHINOHE TAKASHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!