Field oxide profile of an isolation region associated with a contact structure of a semiconductor device

In one embodiment of the present invention, a contact structure of a semiconductor device within an integrated circuit includes an active region, the active region having been defined using a mask provided on a substrate. The contact structure further includes an isolation region adjacent the active...

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Bibliographische Detailangaben
Hauptverfasser: JAN DER-E, ARCH JOHN KENNETH, HU BINGHUA, MERCER BETTY SHU, HOSEIN ASADD M, MAHALINGAM PUSHPA, THOMPSON C. MATTHEW
Format: Patent
Sprache:eng
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