Oxynitride gate dielectric and method of forming

A method for forming an oxynitride gate dielectric in a semiconductor device and gate dielectric structure formed by the method are disclosed. In the method, an oxynitride layer is first formed on a silicon surface and then re-oxidized with a gas mixture containing oxygen and at least one halogenate...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BUCHANAN DOUGLAS ANDREW, COPEL MATTHEW WARREN, VAREKAMP PATRICK RONALD
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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