Plating apparatus for wafer

A plating apparatus is provided to allow the whole area of a target plating surface of a wafer to be subjected to more uniform plating treatment and moreover enables a target plating surface of a wider area to be subjected to positive and uniform plating treatment. In the plating apparatus which has a stirring bar within a plating tank and which performs plating treatment of a target plating surface of the wafer while stirring a plating solution near the target plating surface of the wafer by moving the stirring bar, the stirring bar is rotated while being oscillated in a motion plane substantially parallel to the target plating surface of the wafer. By this operation, the occurrence of an eddy flow of the plating solution is suppressed during stirring and it becomes possible to positively carry out more uniform plating treatment of a wider region.