Process for oxide fabrication using oxidation steps below and above a threshold temperature

Process for oxide fabrication using oxidation steps below and above a threshold temperature

A process for forming an oxide layer includes forming a first oxide portion over a substrate at a temperature below a threshold temperature. A second oxide portion is formed under the first oxide portion at a temperature above the threshold temperature. The substrate is illustratively oxidizable sil...

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Hauptverfasser: ROY PRADIP KUMAR, CHEN YUANNING, CHETLUR SUNDAR SRINIVASAN
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator ROY PRADIP KUMAR
CHEN YUANNING
CHETLUR SUNDAR SRINIVASAN
description A process for forming an oxide layer includes forming a first oxide portion over a substrate at a temperature below a threshold temperature. A second oxide portion is formed under the first oxide portion at a temperature above the threshold temperature. The substrate is illustratively oxidizable silicon and the threshold temperature is the viscoelastic temperature of silicon dioxide.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Process for oxide fabrication using oxidation steps below and above a threshold temperature
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