Encapsulated integrated circuit package and method of manufacturing an integrated circuit package

In one aspect, the present invention features a method of manufacturing an integrated circuit package including providing a substrate having a first surface, a second surface opposite the first surface, a cavity through the substrate between the first and second surfaces and a conductive via extendi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MCLELLAN NEIL ROBERT, COMBS EDWARD G, FAN CHUN HO, LABEEB SADAK THAMBY, KEUNG CHOW LAP, CHEUNG TSANG KWOK
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:In one aspect, the present invention features a method of manufacturing an integrated circuit package including providing a substrate having a first surface, a second surface opposite the first surface, a cavity through the substrate between the first and second surfaces and a conductive via extending through the substrate and electrically connecting the first surface of the substrate with the second surface of the substrate, applying a strip to the second surface of the substrate, mounting a semiconductor die on the strip, at least a portion of the semiconductor die being disposed inside the cavity, encapsulating in a molding material at least a portion of the first surface of the substrate, and removing the strip from the substrate. In another aspect, the invention features an integrated circuit package including a substrate having a first surface, a second surface opposite the first surface, a cavity through the substrate between the first and second surfaces and a conductive via extending through the substrate and electrically connecting the first surface of the substrate with the second surface of the substrate, a semiconductor die electrically coupled with the conductive via, at least a portion of the semiconductor die being disposed inside the cavity of the substrate, an encapsulant material encapsulating a portion of the semiconductor die such that at least a portion of a surface of the semiconductor die is exposed.