Method for the deposition of silicon germanium layers

A vertical chemical vapor deposition (CVD) apparatus and methods for the deposition of compound films, such as silicon germanium films, are provided. In a preferred embodiment, the apparatus comprises a process chamber, wherein the process chamber is elongated in a first generally vertical direction...

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Bibliographische Detailangaben
Hauptverfasser: ZAGWIJN PETER MARC, OOSTERLAKEN THEODORUS GERARDUS MARIA
Format: Patent
Sprache:eng
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