Method and apparatus for the etching of photomask substrates using pulsed plasma
Disclosed is a method and apparatus for the etching of a thin film upon a photomask. The etching is carried out in a reactor via an inductively coupled pulsed plasma. Pulsing of the plasma is achieved by regulating the time period (or duty cycle) in which the plasma is generated. It has been found t...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | JOHNSON DAVID J ONISHI SHINZO CONSTANTINE CHRISTOPHER |
| description | Disclosed is a method and apparatus for the etching of a thin film upon a photomask. The etching is carried out in a reactor via an inductively coupled pulsed plasma. Pulsing of the plasma is achieved by regulating the time period (or duty cycle) in which the plasma is generated. It has been found that by decreasing the duty cycle, high etch selectively can be achieved and feature sizes can be faithfully maintained. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2003089680A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2003089680A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2003089680A13</originalsourceid><addsrcrecordid>eNqNikEKwkAMRbtxIeodAq6F0YK0SxHFjSCo6xLbjCO2k9Bk7u8IHsDF4_P4b1pczmSBO8CYEcERLSl4HsECAVkbXvEJ7EECGw-ob9D0UMsdKST9vpJ6pQ6kRx1wXkw8Zl_8dlYsj4fb_rQi4YZUsKVI1tyvG-dKV9Xbyu3W5X_VB4xJOI4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method and apparatus for the etching of photomask substrates using pulsed plasma</title><source>esp@cenet</source><creator>JOHNSON DAVID J ; ONISHI SHINZO ; CONSTANTINE CHRISTOPHER</creator><creatorcontrib>JOHNSON DAVID J ; ONISHI SHINZO ; CONSTANTINE CHRISTOPHER</creatorcontrib><description>Disclosed is a method and apparatus for the etching of a thin film upon a photomask. The etching is carried out in a reactor via an inductively coupled pulsed plasma. Pulsing of the plasma is achieved by regulating the time period (or duty cycle) in which the plasma is generated. It has been found that by decreasing the duty cycle, high etch selectively can be achieved and feature sizes can be faithfully maintained.</description><edition>7</edition><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; CINEMATOGRAPHY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DECORATIVE ARTS ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; GLASS ; HOLOGRAPHY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; JOINING GLASS TO GLASS OR OTHER MATERIALS ; MATERIALS THEREFOR ; METALLURGY ; MINERAL OR SLAG WOOL ; MOSAICS ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; ORIGINALS THEREFOR ; PAPERHANGING ; PERFORMING OPERATIONS ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; PRODUCING DECORATIVE EFFECTS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS ; SURFACE TREATMENT OF GLASS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TARSIA WORK ; TRANSPORTING</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030515&DB=EPODOC&CC=US&NR=2003089680A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030515&DB=EPODOC&CC=US&NR=2003089680A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JOHNSON DAVID J</creatorcontrib><creatorcontrib>ONISHI SHINZO</creatorcontrib><creatorcontrib>CONSTANTINE CHRISTOPHER</creatorcontrib><title>Method and apparatus for the etching of photomask substrates using pulsed plasma</title><description>Disclosed is a method and apparatus for the etching of a thin film upon a photomask. The etching is carried out in a reactor via an inductively coupled pulsed plasma. Pulsing of the plasma is achieved by regulating the time period (or duty cycle) in which the plasma is generated. It has been found that by decreasing the duty cycle, high etch selectively can be achieved and feature sizes can be faithfully maintained.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DECORATIVE ARTS</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>GLASS</subject><subject>HOLOGRAPHY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>JOINING GLASS TO GLASS OR OTHER MATERIALS</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>MINERAL OR SLAG WOOL</subject><subject>MOSAICS</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>ORIGINALS THEREFOR</subject><subject>PAPERHANGING</subject><subject>PERFORMING OPERATIONS</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>PRODUCING DECORATIVE EFFECTS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</subject><subject>SURFACE TREATMENT OF GLASS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TARSIA WORK</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNikEKwkAMRbtxIeodAq6F0YK0SxHFjSCo6xLbjCO2k9Bk7u8IHsDF4_P4b1pczmSBO8CYEcERLSl4HsECAVkbXvEJ7EECGw-ob9D0UMsdKST9vpJ6pQ6kRx1wXkw8Zl_8dlYsj4fb_rQi4YZUsKVI1tyvG-dKV9Xbyu3W5X_VB4xJOI4</recordid><startdate>20030515</startdate><enddate>20030515</enddate><creator>JOHNSON DAVID J</creator><creator>ONISHI SHINZO</creator><creator>CONSTANTINE CHRISTOPHER</creator><scope>EVB</scope></search><sort><creationdate>20030515</creationdate><title>Method and apparatus for the etching of photomask substrates using pulsed plasma</title><author>JOHNSON DAVID J ; ONISHI SHINZO ; CONSTANTINE CHRISTOPHER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2003089680A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DECORATIVE ARTS</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>GLASS</topic><topic>HOLOGRAPHY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>JOINING GLASS TO GLASS OR OTHER MATERIALS</topic><topic>MATERIALS THEREFOR</topic><topic>METALLURGY</topic><topic>MINERAL OR SLAG WOOL</topic><topic>MOSAICS</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>ORIGINALS THEREFOR</topic><topic>PAPERHANGING</topic><topic>PERFORMING OPERATIONS</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>PRODUCING DECORATIVE EFFECTS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</topic><topic>SURFACE TREATMENT OF GLASS</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TARSIA WORK</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>JOHNSON DAVID J</creatorcontrib><creatorcontrib>ONISHI SHINZO</creatorcontrib><creatorcontrib>CONSTANTINE CHRISTOPHER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JOHNSON DAVID J</au><au>ONISHI SHINZO</au><au>CONSTANTINE CHRISTOPHER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method and apparatus for the etching of photomask substrates using pulsed plasma</title><date>2003-05-15</date><risdate>2003</risdate><abstract>Disclosed is a method and apparatus for the etching of a thin film upon a photomask. The etching is carried out in a reactor via an inductively coupled pulsed plasma. Pulsing of the plasma is achieved by regulating the time period (or duty cycle) in which the plasma is generated. It has been found that by decreasing the duty cycle, high etch selectively can be achieved and feature sizes can be faithfully maintained.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2003089680A1 |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMICAL SURFACE TREATMENT CHEMISTRY CINEMATOGRAPHY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DECORATIVE ARTS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GLASS HOLOGRAPHY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL JOINING GLASS TO GLASS OR OTHER MATERIALS MATERIALS THEREFOR METALLURGY MINERAL OR SLAG WOOL MOSAICS MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ORIGINALS THEREFOR PAPERHANGING PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PRODUCING DECORATIVE EFFECTS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TARSIA WORK TRANSPORTING |
| title | Method and apparatus for the etching of photomask substrates using pulsed plasma |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T02%3A28%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=JOHNSON%20DAVID%20J&rft.date=2003-05-15&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2003089680A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |